منابع مشابه
Process and Reliability of SF6/O2 Plasma Etched Copper TSVs
The formation of a TSV for three-dimensional interconnects using SF6/O2 plasma is explored. Adjusting the O2 gas concentration to 45 sccm, while the SF6 concentration is set to 35 sccm, produced the best combination of chemical and physical etching to provide sidewall angles of 88◦. Three TSV aspect ratios are etched (5/58, 10/100, and 20/100 μm) and subsequently analyzed using the finite eleme...
متن کاملMicrowave Diagnostics of a Strong Arc Discharge Plasma in SF6
für Naturforschung in cooperation with the Max Planck Society for the Advancement of Science under a Creative Commons Attribution 4.0 International License. Dieses Werk wurde im Jahr 2013 vom Verlag Zeitschrift für Naturforschung in Zusammenarbeit mit der Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. digitalisiert und unter folgender Lizenz veröffentlicht: Creative Commons Namen...
متن کاملelimination of btex , voc vapors from glycol in gas hydrant unit
during natural gas processing, water in natural gas may cause to hydrates formation in pipelines which may lead to serious damages to process equipments. given the problems raised by present of water in natural gas, glycol solvent uses to remove water.in contact of glycol with gas always an amount of btex and voc absorb along with water, which on glycol recovery process, these substances separa...
15 صفحه اولcritical period effects in foreign language learning:the influence of maturational state on the acquisition of reading,writing, and grammar in english as a foreign language
since the 1960s the age effects on learning both first and second language have been explored by many linguists and applied linguists (e.g lennerberg, 1967; schachter, 1996; long, 1990) and the existence of critical period for language acquisition was found to be a common ground of all these studies. in spite of some common findings, some issues about the impacts of age on acquiring a second or...
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ژورنال
عنوان ژورنال: PLASMA PHYSICS AND TECHNOLOGY
سال: 2019
ISSN: 2336-2634,2336-2626
DOI: 10.14311/ppt.2019.2.161